RQ3G150GNTB

Rohm Semiconductor

RQ3G150GNTB

Datasheet

Analog & Power

MOSFET N-CHANNEL 40V 39A 8HSMT

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.2mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 20 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Max Power Dissipation20W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-HSMT (3.2x3)

Environmental

Operating Temperature-55°C~150°C(TJ)