RQ3E180AJTB

Rohm Semiconductor

RQ3E180AJTB

Datasheet

Analog & Power

MOSFET N-CH 30V 18A/30A 8HSMT

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 18A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4290 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 11mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 30A (Tc)
Max Power Dissipation2W (Ta), 30W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-HSMT (3.2x3)

Environmental

Operating Temperature150°C(TJ)