RP1E090RPTR

Rohm Semiconductor

RP1E090RPTR

Analog & Power

MOSFET P-CH 30V 9A MPT6

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16.9mOhm @ 9A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Supplier Device PackageMPT6

Environmental

Operating Temperature150°C(TJ)