RJP020N06T100

Rohm Semiconductor

RJP020N06T100

Datasheet

Analog & Power

MOSFET N-CH 60V 2A MPT3

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 2A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-243AA
Supplier Device PackageMPT3

Environmental

Operating Temperature150°C(TJ)