RJ1L08CGNTLL

Name: RJ1L08CGNTLL
Brand: Rohm Semiconductor

Analog & Power

MOSFET N-CH 60V 80A LPTL

DiscontinuedTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	7.7mOhm @ 80A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 30 V
Manufacturer	Rohm Semiconductor
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Not For New Designs
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 50µA

Drain-to-Source Voltage	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Max Power Dissipation	96W (Tc)

Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package	LPTL

Operating Temperature	150°C (TJ)