RH6P040BHTB1

Rohm Semiconductor

RH6P040BHTB1

Datasheet

Analog & Power

NCH 100V 40A, HSMT8, POWER MOSFE

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.6mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 50 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Max Power Dissipation59W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-HSMT (3.2x3)

Environmental

Operating Temperature150°C(TJ)