RGWS60TS65DGC13

Rohm Semiconductor

RGWS60TS65DGC13

Datasheet

Analog & Power

IGBT TRNCH FIELD 650V 51A TO247G

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge58 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)88 ns
Switching Energy500µJ (on), 450µJ (off)
Td (on/off) @ 25°C32ns/91ns
Test Condition400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)51 A
Current - Collector Pulsed (Icm)90 A
Power - Max156 W

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247G

Environmental

Operating Temperature-40°C ~ 175°C (TJ)