RGT8TM65DGC9

Rohm Semiconductor

RGT8TM65DGC9

Datasheet

Analog & Power

IGBT TRENCH FLD 650V 5A TO220NFM

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge13.5 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
Reverse Recovery Time (trr)40 ns
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)5 A
Current - Collector Pulsed (Icm)12 A
Power - Max16 W

Mechanical

Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NFM

Environmental

Operating Temperature-40°C ~ 175°C (TJ)