RGT8NS65DGC9

Rohm Semiconductor

RGT8NS65DGC9

Datasheet

Analog & Power

IGBT TRENCH FIELD 650V 8A TO262

ActiveTO-262-3 Long Leads, I2PAK, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge13.5 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)40 ns
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)8 A
Current - Collector Pulsed (Icm)12 A
Power - Max65 W

Mechanical

PackageTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device PackageTO-262

Environmental

Operating Temperature-40°C ~ 175°C (TJ)