RGT8BM65DTL

Rohm Semiconductor

RGT8BM65DTL

Datasheet

Analog & Power

IGBT TRENCH FIELD 650V 8A TO252

DiscontinuedTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge13.5 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusNot For New Designs
Reverse Recovery Time (trr)40 ns
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)8 A
Current - Collector Pulsed (Icm)12 A
Power - Max62 W

Mechanical

PackageCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252

Environmental

Operating Temperature-40°C~175°C(TJ)