RGT60TS65DGC11

Rohm Semiconductor

RGT60TS65DGC11

Datasheet

Analog & Power

IGBT TRNCH FIELD 650V 55A TO247N

DiscontinuedTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge58 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
PackagingTube
Part StatusNot For New Designs
Reverse Recovery Time (trr)58 ns
Td (on/off) @ 25°C29ns/100ns
Test Condition400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)90 A
Power - Max194 W

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247N

Environmental

Operating Temperature-40°C ~ 175°C (TJ)