RGT50NL65DGTL

Rohm Semiconductor

RGT50NL65DGTL

Datasheet

Analog & Power

IGBT TRENCH FIELD 650V 48A LPDS

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge49 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)58 ns
Td (on/off) @ 25°C27ns/88ns
Test Condition400V, 25A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)48 A
Current - Collector Pulsed (Icm)75 A
Power - Max194 W

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageLPDS

Environmental

Operating Temperature-40°C~175°C(TJ)