RGT30NS65DGTL

Rohm Semiconductor

RGT30NS65DGTL

Datasheet

Analog & Power

IGBT TRENCH FIELD 650V 30A LPDS

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge32 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Reverse Recovery Time (trr)55 ns
Td (on/off) @ 25°C18ns/64ns
Test Condition400V, 15A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)45 A
Power - Max133 W

Mechanical

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageLPDS

Environmental

Operating Temperature-40°C ~ 175°C (TJ)