RGT30NL65DGTL

Rohm Semiconductor

RGT30NL65DGTL

Datasheet

Analog & Power

IGBT TRENCH FIELD 650V 30A LPDS

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge32 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)55 ns
Td (on/off) @ 25°C18ns/64ns
Test Condition400V, 15A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)45 A
Power - Max133 W

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageLPDS

Environmental

Operating Temperature-40°C~175°C(TJ)