RGS60TS65DHRC11

Rohm Semiconductor

RGS60TS65DHRC11

Datasheet

Analog & Power

IGBT TRNCH FIELD 650V 56A TO247N

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge36 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)103 ns
Switching Energy660µJ (on), 810µJ (off)
Td (on/off) @ 25°C28ns/104ns
Test Condition400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)56 A
Current - Collector Pulsed (Icm)90 A
Power - Max223 W

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247N

Environmental

Operating Temperature-40°C~175°C(TJ)