RFN1VWM2STR

Rohm Semiconductor

RFN1VWM2STR

Datasheet

Analog & Power

DIODE GEN PURP 200V 1A PMDE

Active2-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberRFN1VWM2
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)25 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If930 mV @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1 µA @ 200 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case2-SMD, Flat Lead
Supplier Device PackagePMDE

Environmental

Operating Temperature - Junction175°C