RFN10NS3STL

Rohm Semiconductor

RFN10NS3STL

Datasheet

Analog & Power

DIODE GEN PURP 350V 10A LPDS

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberRFN10
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)350 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 350 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageLPDS

Environmental

Operating Temperature - Junction150°C