RF6E065BNTCR

Rohm Semiconductor

RF6E065BNTCR

Datasheet

Analog & Power

MOSFET N-CH 30V 6.5A TUMT6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.3mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation910mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Supplier Device PackageTUMT6

Environmental

Operating Temperature150°C(TJ)