RF6C055BCTCR

Rohm Semiconductor

RF6C055BCTCR

Datasheet

Analog & Power

MOSFET P-CHANNEL 20V 5.5A TUMT6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25.8mOhm @ 5.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.2V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Max Power Dissipation1W (Tc)

Mechanical

Package / Case6-SMD, Flat Leads
Supplier Device PackageTUMT6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)