RF4L070BGTCR

Rohm Semiconductor

RF4L070BGTCR

Datasheet

Analog & Power

NCH 60V 7A, HUML2020L8, POWER MO

Active8-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs27mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 30 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerUDFN
Supplier Device PackageDFN2020-8S

Environmental

Operating Temperature150°C(TJ)