RF4E100AJTCR

Rohm Semiconductor

RF4E100AJTCR

Datasheet

Analog & Power

MOSFET N-CH 30V 10A HUML2020L8

Active8-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12.4mOhm @ 10A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1460 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation2W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerUDFN
Supplier Device PackageHUML2020L8

Environmental

Operating Temperature-55°C~150°C(TJ)