RF4E060AJTCR

Rohm Semiconductor

RF4E060AJTCR

Datasheet

Analog & Power

MOSFET N-CH 30V 6A HUML2020L8

Active8-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs37mOhm @ 6A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 15 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerUDFN
Supplier Device PackageHUML2020L8

Environmental

Operating Temperature150°C(TJ)