RF4C100BCTCR

Rohm Semiconductor

RF4C100BCTCR

Datasheet

Analog & Power

MOSFET P-CH 20V 10A HUML2020L8

Active8-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.6mOhm @ 10A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1660 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.2V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerUDFN
Supplier Device PackageHUML2020L8

Environmental

Operating Temperature150°C (TJ)