RD3U080AAFRATL

Rohm Semiconductor

RD3U080AAFRATL

Datasheet

Analog & Power

250V 8A TO-252, AUTOMOTIVE POWER

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs300mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation85W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252

Environmental

Operating Temperature150°C (TJ)