RD3U041AAFRATL

Rohm Semiconductor

RD3U041AAFRATL

Datasheet

Analog & Power

MOSFET N-CH 250V 4A TO252

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.3Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation29W (Tc)

Environmental

GradeAutomotive
Operating Temperature150°C (TJ)
QualificationAEC-Q101