RD3H080SPFRATL

Rohm Semiconductor

RD3H080SPFRATL

Datasheet

Analog & Power

MOSFET P-CH 45V 8A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs91mOhm @ 8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

Electrical

Drain-to-Source Voltage45 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Max Power Dissipation15W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature150°C (TJ)
QualificationAEC-Q101