RCJ330N25TL

Rohm Semiconductor

RCJ330N25TL

Datasheet

Analog & Power

MOSFET N-CH 250V 33A LPTS

DiscontinuedTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 16.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Max Power Dissipation1.56W (Ta), 40W (Tc)

Mechanical

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageLPTS

Environmental

Operating Temperature150°C (TJ)