R6524ENZ4C13

Rohm Semiconductor

R6524ENZ4C13

Datasheet

Analog & Power

650V 24A TO-247, LOW-NOISE POWER

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs185mOhm @ 11.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 750µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Max Power Dissipation245W (Tc)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247G

Environmental

Operating Temperature150°C (TJ)