R6030JNZC8

Rohm Semiconductor

R6030JNZC8

Datasheet

Analog & Power

MOSFET N-CH 600V 30A TO3PF

ObsoleteTO-3P-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs143mOhm @ 15A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 100 V
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id7V @ 5.5mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Max Power Dissipation93W (Tc)

Mechanical

PackageBulk
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3PF

Environmental

Operating Temperature-55°C~150°C(TJ)