R6020FNJTL

Rohm Semiconductor

R6020FNJTL

Datasheet

Analog & Power

MOSFET N-CH 600V 20A LPT

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs280mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2350 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation304W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageLPTS

Environmental

Operating Temperature150°C (TJ)