R6009JND3TL1

Rohm Semiconductor

R6009JND3TL1

Datasheet

Analog & Power

MOSFET N-CH 600V 9A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs585mOhm @ 4.5A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds645 pF @ 100 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id7V @ 1.38mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252

Environmental

Operating Temperature-55°C~150°C(TJ)