R6009ENX

Rohm Semiconductor

R6009ENX

Datasheet

Analog & Power

MOSFET N-CH 600V 9A TO220FM

DiscontinuedTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs535mOhm @ 2.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeThrough Hole
PackagingBulk
Part StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation40W (Tc)

Mechanical

Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FM

Environmental

Operating Temperature150°C (TJ)