R6007JNJGTL

Rohm Semiconductor

R6007JNJGTL

Datasheet

Analog & Power

MOSFET N-CH 600V 7A LPTS

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs780mOhm @ 3.5A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds475 pF @ 100 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id7V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Max Power Dissipation96W (Tc)

Mechanical

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageLPTS

Environmental

Operating Temperature-55°C ~ 150°C (TJ)