R6004END3TL1

Rohm Semiconductor

R6004END3TL1

Datasheet

Analog & Power

MOSFET N-CH 600V 4A TO252

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs980mOhm @ 1.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation59W (Tc)

Mechanical

Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252

Environmental

Operating Temperature150°C (TJ)