QS8M31TR

Rohm Semiconductor

QS8M31TR

Datasheet

Analog & Power

MOSFET N/P-CH 60V 3A/2A TSMT8

Active8-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Base Product NumberQS8M31
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs4nC @ 5V, 7.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V, 750pF @ 10V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA, 3V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 2A (Ta)
Power - Max1.1W (Ta)

Mechanical

Package / Case8-SMD, Flat Leads
Supplier Device PackageTSMT8

Environmental

Operating Temperature150°C (TJ)