QH8KC5TCR

Rohm Semiconductor

QH8KC5TCR

Datasheet

Analog & Power

MOSFET 2N-CH 60V 3A TSMT8

Active8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V
Base Product NumberQH8KC5
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs3.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds135pF @ 30V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Power - Max1.1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

Environmental

Operating Temperature150°C (TJ)