QH8K51TR

Rohm Semiconductor

QH8K51TR

Datasheet

Analog & Power

MOSFET 2N-CH 100V 2A TSMT8

Active8-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs325mOhm @ 2A, 10V
Base Product NumberQH8K51
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs4.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 25V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Power - Max1.1W (Ta)

Mechanical

Package / Case8-SMD, Flat Leads
Supplier Device PackageTSMT8

Environmental

Operating Temperature150°C (TJ)