HS8MA2TCR1

Rohm Semiconductor

HS8MA2TCR1

Datasheet

Analog & Power

MOSFET N/P-CH 30V 5A/7A 9DFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Base Product NumberHS8MA2
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds320pF @ 10V, 365pF @ 10V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 7A (Ta)
Power - Max2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device PackageDFN3333-9DC

Environmental

Operating Temperature150°C (TJ)