HP8ME5TB1

Rohm Semiconductor

HP8ME5TB1

Datasheet

Analog & Power

MOSFET N/P-CH 100V 3A/8.5A 8HSOP

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
ConfigurationN and P-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 10V, 19.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 50V, 590pF @ 50V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Power - Max3W (Ta), 20W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-HSOP

Environmental

Operating Temperature150°C (TJ)