EM6M1T2R

Rohm Semiconductor

EM6M1T2R

Analog & Power

MOSFET N/P-CH 30V/20V EMT6

DiscontinuedSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Base Product NumberEM6M1
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds13pF @ 5V
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage30V, 20V
Current - Continuous Drain (Id) @ 25°C100mA, 200mA
Power - Max150mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6

Environmental

Operating Temperature150°C (TJ)