BSM300C12P3E201

Rohm Semiconductor

BSM300C12P3E201

Datasheet

Analog & Power

SICFET N-CH 1200V 300A MODULE

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBSM300
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 10 V
ManufacturerRohm Semiconductor
Mounting TypeChassis Mount
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -4V
Vgs(th) (Max) @ Id5.6V @ 80mA

Electrical

Drain-to-Source Voltage1200 V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Max Power Dissipation1360W (Tc)

Mechanical

PackageBulk
Package / CaseModule
Supplier Device PackageModule

Environmental

Operating Temperature-40°C~150°C(TJ)