Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | BSM180 |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 10 V |
| Manufacturer | Rohm Semiconductor |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -4V |
| Vgs(th) (Max) @ Id | 5.6V @ 50mA |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Max Power Dissipation | 880W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | Module |
| Supplier Device Package | Module |
| Operating Temperature | -40°C~150°C(TJ) |
|---|