BD2320EFJ-LAE2

Rohm Semiconductor

BD2320EFJ-LAE2

Datasheet

Analog & Power

100 V VB 3.5 A/4.5 A PEAK CURREN

Active8-SOIC (0.154", 3.90mm Width) Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Channel TypeIndependent
Driven ConfigurationHigh-Side and Low-Side
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
ManufacturerRohm Semiconductor
Mounting TypeSurface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)8ns, 6ns

Electrical

Current - Peak Output (Source, Sink)3.5A, 4.5A
High Side Voltage - Max (Bootstrap)100 V
Logic Voltage - VIL, VIH1.7V, 1.5V
Supply Voltage7.5V ~ 14.5V

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package8-HTSOP-J

Environmental

Operating Temperature-40°C~125°C(TA)