UPA2730TP-E2-AZ

Renesas

UPA2730TP-E2-AZ

Analog & Power

UPA2730 - POWER FIELD-EFFECT TRA

Obsolete8-PowerSOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 7.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4670 pF @ 10 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Ta), 42A (Tc)
Max Power Dissipation3W (Ta), 40W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerSOIC (0.173", 4.40mm Width)
Supplier Device Package8-HSOP

Environmental

Operating Temperature150°C