UPA1902TE-T1-AT

Renesas

UPA1902TE-T1-AT

Analog & Power

UPA1902TE-T1-AT - N-CHANNEL MOS

ObsoleteSC-95Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 3.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds780 pF @ 10 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Max Power Dissipation200mW (Ta)

Mechanical

PackageBulk
Package / CaseSC-95
Supplier Device PackageSC-95

Environmental

Operating Temperature150°C