RJK5030DPD-03#J2

Renesas

RJK5030DPD-03#J2

Analog & Power

RJK5030DPD - N CHANNEL MOSFET

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.6Ohm @ 2A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 25 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 1mA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Max Power Dissipation41.7W (Tc)

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageMP-3A

Environmental

Operating Temperature150°C