RJK5012DPP-MG#T2

Renesas

RJK5012DPP-MG#T2

Analog & Power

RJK5012DPP - N CHANNEL MOSFET

ObsoleteTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs620mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
ManufacturerRenesas
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 1mA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation30W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FN

Environmental

Operating Temperature150°C