NP82N10PUF-E1-AY

Renesas

NP82N10PUF-E1-AY

Analog & Power

NP82N10PUF-E1-AY - MOS FIELD EFF

ObsoleteAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 41A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 25 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5.8V, 10V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Max Power Dissipation1.8W (Ta), 150W (Tc)

Mechanical

PackageBulk
Supplier Device PackageTO-263-3

Environmental

Operating Temperature175°C