NP34N055SLE-E1-AY

Renesas

NP34N055SLE-E1-AY

Analog & Power

NP34N055 - POWER FIELD-EFFECT TR

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 17A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C34A (Ta)
Max Power Dissipation1.2W (Ta), 88W (Tc)

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (MP-3ZK)

Environmental

Operating Temperature175°C