HAT2205C-EL-E

Renesas

HAT2205C-EL-E

Analog & Power

HAT2205C - N-CHANNEL POWER MOSFE

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 1.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 10 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.2V @ 1mA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation200mW (Ta)

Mechanical

PackageBulk
Package / Case6-SMD, Flat Leads
Supplier Device Package6-CMFPAK

Environmental

Operating Temperature150°C